Nitride HEMTs vs arsenides: The ultimate battle?
Author:
Publisher
Pensoft Publishers
Subject
Automotive Engineering
Reference9 articles.
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3. The Effect of Technological Factors on the Characteristics of Ohmic Contacts of the Power AlGaN/GaN/SiC-HEMT;Russian Microelectronics;2019-12
4. Enhancement of Johnson figure of merit in III‐V HEMT combined with discrete field plate and AlGaN blocking layer;International Journal of RF and Microwave Computer-Aided Engineering;2019-11-13
5. The Standard Model of the Heterostructure for Microwave Devices;Russian Microelectronics;2017-12
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