The Effect of Technological Factors on the Characteristics of Ohmic Contacts of the Power AlGaN/GaN/SiC-HEMT
Author:
Publisher
Pleiades Publishing Ltd
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1134/S1063739719080055.pdf
Reference18 articles.
1. Greco, G., Iucolano, F., and Roccaforte, F., Ohmic contacts to gallium nitride materials, Appl. Surf. Sci., 2016, vol. 383, pp. 324–345. https://doi.org/10.1016/j.apsusc.2016.04.016
2. Jessen, G.H., Fitch, R.C., Gillespie, J.K., Via, G., Crespo, A., Langley, D., Denninghoff, D.J., Trejo, M., and Heller, E.R., Short-channel effect limitations on high-frequency operation of AlGaN/GaN HEMTs for T-gate devices, IEEE Trans. Electron Dev., 2007, vol. 54, no. 10, pp. 2589–2597. https://doi.org/10.1109/TED.2007.904476
3. Han, K., Employing hole-array recess of barrier layer of AlGaN/GaN heterostructures to reduce annealing temperature of ohmic contact, Semicond. Sci. Technol., 2017, vol. 32, no. 10, p. 105010. https://doi.org/10.1088/1361-6641/aa867f
4. Grecoa, G., Iucolano, F., Bongiorno, C., Giannazzo, F., Kryskoc, M., Leszczynski, M., and Roccaforte, F., Ti/Al ohmic contacts on AlGaN/GaN heterostructures with different defect density, Appl. Surf. Sci., 2014, vol. 314, pp. 546–551. https://doi.org/10.1016/j.apsusc.2014.07.018
5. Liu, Z.H., Arulkumaran, S., and Ng, G.I., Temperature dependence of Ohmic contact characteristics in AlGaN/GaN high electron mobility transistors from –50 to 200°C, Appl. Phys. Lett., 2009, vol. 94, no. 14, p. 142105. https://doi.org/10.1063/1.3114422
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