Temperature dependence of Ohmic contact characteristics in AlGaN/GaN high electron mobility transistors from −50 to 200 °C
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3114422
Reference20 articles.
1. Temperature‐dependent microwave noise performances of AlGaN/GaN HEMTs with post‐gate annealing
2. Temperature dependent microwave performance of AlGaN/GaN high-electron-mobility transistors on high-resistivity silicon substrate
3. High temperature power performance of AlGaN∕GaN high-electron-mobility transistors on high-resistivity silicon
4. Transport properties of the advancing interface ohmic contact to AlGaN/GaN heterostructures
5. Investigation of trap effects in AlGaN∕GaN field-effect transistors by temperature dependent threshold voltage analysis
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3. Optimization of Ohmic Contact to Ultrathin-Barrier AlGaN/GaN Heterostructure via an ‘Ohmic-Before-Passivation’ Process;Electronics;2023-04-07
4. On-Chip Integrated High-Sensitivity Temperature Sensor Based on p-GaN/AlGaN/GaN Heterostructure;IEEE Electron Device Letters;2023-04
5. Self-Heating of Annealed Ti/Al/Ni/Au Contacts to Two-Dimensional Electron Gas in AlGaN/GaN Heterostructures;Applied Sciences;2022-11-01
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