On-Chip Integrated High-Sensitivity Temperature Sensor Based on <i>p</i>-GaN/AlGaN/GaN Heterostructure-Reference-Cited by-同舟云学术

On-Chip Integrated High-Sensitivity Temperature Sensor Based on p-GaN/AlGaN/GaN Heterostructure

Published:2023-04 Issue:4 Volume:44 Page:594-597
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Chang Jie¹,Yin Yulian¹,Du Jiahong²^ORCID,Wang Huan¹^ORCID,Li Haoran¹^ORCID,Zhao Changhui¹,Li Hui¹,Hu Cungang¹^ORCID,Cao Wenping¹^ORCID,Tang Xi¹^ORCID,Yang Shu²^ORCID

Affiliation:

1. School of Electrical Engineering and Automation, Institute of Physical Science and Information Technology, Anhui University, Hefei, China

2. School of Microelectronics, University of Science and Technology of China, Hefei, China

Funder

National Natural Science Foundation of China

Anhui Innovation Project

Delta Power Electronics Science and Education Development Program of Delta Group

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10081123/10044116.pdf?arnumber=10044116

Reference33 articles.

1. Enhanced Sensitivity of GaN-Based Temperature Sensor by Using the Series Schottky Barrier Diode Structure

2. Temperature Dependence of the Resistance of AlGaN/GaN Heterostructures and Their Applications as Temperature Sensors

3. Recessed Anode AlGaN/GaN Schottky Barrier Diode for Temperature Sensor Application

4. Effect of Anode Material on the Sensitivity of GaN Schottky Barrier Diode Temperature Sensor

5. Threshold Voltage Instability in p-GaN Gate AlGaN/GaN HFETs

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