Real-time channel temperature monitoring of p-GaN HEMTs based on gate leakage current

Author:

Yin Luqiao,Wu Shuang,Ren KailinORCID,Zhang Wenkui,Zhang Jianhua

Publisher

Elsevier BV

Reference26 articles.

1. Monolithic comparator and sawtooth generator of AlGaN/GaN MIS-HEMTs with threshold voltage modulation for high-temperature applications;Li;IEEE Trans. Electron. Dev.,2021

2. Investigation of dynamic ron stability and hot electrons reliability in normally-off AlGaN/GaN power HEMTs;Shen;Microelectron. J.,2023

3. Lifetime prediction and analysis of AlGaN/GaN HEMT devices under temperature stress;Wang;Microelectron. J.,2022

4. Reduction of oscillator strength due to piezoelectric fields in quantum wells;Seo Im;Phys. Rev. B Condens. Matter,1998

5. “A new simple and low cost short circuit protection method for p-GaN HEMT,” 2021 ieee 2nd China international youth Conference on electrical engineering;Zhan;CIYCEE,2021

Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Determination of the Junction Temperature Under Load Current in GaN Power Devices with Schottky Gate Leakage Current as TSEP;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02

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