Transport properties of the advancing interface ohmic contact to AlGaN/GaN heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1447591
Reference14 articles.
1. Ni and Ti Schottky barriers on n-AlGaN grown on SiC substrates
2. Low resistance ohmic contacts on AlGaN/GaN structures using implantation and the “advancing” Al/Ti metallization
3. Ta-based interface ohmic contacts to AlGaN/GaN heterostructures
4. Microstructure of Ti/Al ohmic contacts for n-AlGaN
5. Examination of tunnel junctions in the AlGaN/GaN system: Consequences of polarization charge
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