Low resistance ohmic contacts on AlGaN/GaN structures using implantation and the “advancing” Al/Ti metallization
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123927
Reference13 articles.
1. Hall measurements and contact resistance in doped GaN/AlGaN heterostructures
2. Study of contact formation in AlGaN/GaN heterostructures
3. A study on barrier height of AuAlxGa1 − xN Schottky diodes in the range 0 ≤ x ≤ 0.20
4. Microstructure of Ti/Al and Ti/Al/Ni/Au Ohmic contacts for n‐GaN
5. Microstructure of Ti/Al ohmic contacts for n-AlGaN
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