Low Specific Contact Resistivity of 10<sup>−3</sup>Ω·cm<sup>2</sup> for Ti/Al/Ni/Au Multilayer Metals on SI-GaN:Fe Substrate-Reference-Cited by-同舟云学术

Low Specific Contact Resistivity of 10⁻³Ω·cm² for Ti/Al/Ni/Au Multilayer Metals on SI-GaN:Fe Substrate

Published:2022-10 Issue:10 Volume:69 Page:5773-5779
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Yang Xianghong¹^ORCID,Hu Long²^ORCID,Dang Xin¹,Li Xin¹^ORCID,Liu Weihua¹^ORCID,Han Chuanyu¹,Li Song³

Affiliation:

1. Department of Microelectronics, Key Laboratory of Micro-Nano Electronics and System Integration of Xi’an City, School of Electronic and Information Engineering, Xi’an Jiaotong University, Shaanxi, Xi’an, China

2. Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi’an Jiaotong University, Shaanxi, Xi’an, China

3. College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, China

Funder

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

Foundation of State Key Laboratory of Pulsed Power Laser Technology

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9901396/09882015.pdf?arnumber=9882015

Reference62 articles.

1. The role of barrier layer on Ohmic performance of Ti∕Al-based contact metallizations on AlGaN∕GaN heterostructures

2. Ohmic contacts to p-type GaN based on TaN, TiN, and ZrN

3. Electrical properties of Ni∕Au and Au contacts on p-type GaN

4. Microstructure evolution of oxidized Ni/Au ohmic contacts to p-GaN studied by X-ray diffraction

5. Mechanism for Ohmic contact formation of oxidized Ni/Au onp-type GaN

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