Review—Recent Advances in Designing Gallium Oxide MOSFET for RF Application

Abstract

The large bandgap (∼4.8 eV), high critical field strength (∼8 MV cm−1) and high saturation velocity (∼2e7 cm s−1) are the key enabling material parameters of gallium oxide (GO) which allows it for designing high power radio frequency (RF) MOSFET. In MOS device-based applications, these material parameters combined with large area native substrates and ion-implantation technology results in exceptionally low ON-state power losses, high-speed power, RF switching, and more stable high-temperature operation. This paper comprehensively focuses on reviewing the latest progress of ultra-wide bandgap GO MOSFET for RF application. The performance of GO MOS devices is fully discussed and compared. Finally, potential solutions to the challenges of GO-based MOSFET for RF applications are also discussed and explored.