Ta-based interface ohmic contacts to AlGaN/GaN heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1365431
Reference16 articles.
1. Hall measurements and contact resistance in doped GaN/AlGaN heterostructures
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4. Microstructure of Ti/Al ohmic contacts for n-AlGaN
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1. Physical nature of size effects in TiAlNiAu/GaN ohmic contacts to AlGaN/GaN heteroepitaxial structures;Semiconductor Science and Technology;2022-04-13
2. Mechanism of low-temperature-annealed Ohmic contacts to AlGaN/GaN heterostructures: A study via formation and removal of Ta-based Ohmic-metals;Applied Physics Letters;2022-01-31
3. Electrical characterization of AlGaN/GaN heterostructures under Ohmic metals by using multi-probe Hall devices;Applied Physics Letters;2021-07-12
4. A Study on the Optimized Ohmic Contact Process of AlGaN/GaN-Si MIS-HEMTs;IEEE Access;2021
5. Depth profile study on Ti/Al bilayer Ohmic contacts to AlGaN/GaN;Materials Today: Proceedings;2021
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