Mechanism of low-temperature-annealed Ohmic contacts to AlGaN/GaN heterostructures: A study via formation and removal of Ta-based Ohmic-metals-Reference-Cited by-同舟云学术

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Mechanism of low-temperature-annealed Ohmic contacts to AlGaN/GaN heterostructures: A study via formation and removal of Ta-based Ohmic-metals

Published:2022-01-31 Issue:5 Volume:120 Page:052104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Uryu Kazuya¹²,Kiuchi Shota¹,Sato Taku²,Suzuki Toshi-kazu¹^ORCID

Affiliation:

1. Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan

2. Advantest Laboratories Ltd., 48-2 Matsubara, Kami-Ayashi, Aoba-ku, Sendai, Miyagi 989-3124, Japan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0080265

Reference43 articles.

1. Ohmic contacts to Gallium Nitride materials

2. Study of contact formation in AlGaN/GaN heterostructures

3. Differences in the reaction kinetics and contact formation mechanisms of annealed Ti∕Al∕Mo∕Au Ohmic contacts on n-GaN and AlGaN∕GaN epilayers

4. AlGaN/GaN High-Electron-Mobility Transistors Fabricated Through a Au-Free Technology

5. Improved Power Device Figure-of-Merit ($4.0\times 10^{8}$ V$^{2}$ $\Omega^{-1}$ cm$^{-2}$) in AlGaN/GaN High-Electron-Mobility Transistors on High-Resistivity 4-in. Si

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electron mobility enhancement in n-GaN under Ohmic-metal;AIP Advances;2023-07-01

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