Ta/Al/CuW low temperature ohmic contacts for GaN-on-Si HEMT
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Publisher
Elsevier BV
Reference31 articles.
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4. Effects of interface oxidation on the transport behavior of the two-dimensional-electron-gas in AlGaN/GaN heterostructures by plasma-enhanced-atomic-layer- deposited AIN passivation;Huang;J. Appl. Phys.,2013
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