Nanoscale structural and electrical evolution of Ta- and Ti-based contacts on AlGaN/GaN heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4819400
Reference40 articles.
1. Wide Energy Bandgap Electronic Devices
2. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
3. Recent advances in GaN transistors for future emerging applications
4. Very low resistance multilayer Ohmic contact to n‐GaN
5. Low-resistance Ti/Al/Ti/Au multilayer ohmic contact to n-GaN
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4. Improvement of Ti/Al/Ti Ohmic contacts on AlGaN/GaN heterostructures by insertion of a thin carbon interfacial layer;Applied Physics Letters;2024-01-01
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