Low-resistance Ti/Al/Ti/Au multilayer ohmic contact to n-GaN
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1350617
Reference26 articles.
1. Progress and prospects of group-III nitride semiconductors
2. Effects of piezoelectric field on defect formation, charge transfer, and electron transport at GaN/AlxGa1−xN interfaces
3. Effects of piezoelectric field on defect formation, charge transfer, and electron transport at GaN/AlxGa1−xN interfaces
4. Photoluminescence characterization of the quantum well structure and influence of optical illumination on the electrical performance of AlGaN/GaN modulation‐doped field‐effect transistors
5. Ohmic contact penetration and encroachment in GaAs/AlGaAs and GaAs FETs
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