Effects of interface oxidation on the transport behavior of the two-dimensional-electron-gas in AlGaN/GaN heterostructures by plasma-enhanced-atomic-layer-deposited AlN passivation-Reference-Cited by-同舟云学术

Effects of interface oxidation on the transport behavior of the two-dimensional-electron-gas in AlGaN/GaN heterostructures by plasma-enhanced-atomic-layer-deposited AlN passivation

Published:2013-10-14 Issue:14 Volume:114 Page:144509
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Huang Sen,Wei Ke,Tang Zhikai,Yang Shu,Liu Cheng,Guo Lei,Shen Bo,Zhang Jinhan,Kong Xin,Liu Guoguo,Zheng Yingkui,Liu Xinyu,Chen Kevin J.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4824829

Reference17 articles.

1. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

2. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs

3. Slow transients observed in AlGaN HFETs: Effects of SiN/sub x/ passivation and UV illumination

4. Conductivity and Hall effect measurements on intentionally undoped and doped AlGaN/GaN heterostructures before and after passivation

5. Improved transport properties of the two-dimensional electron gas in AlGaN∕GaN heterostructures by AlN surface passivation layer

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