Au-free low-temperature ohmic contacts for AlGaN/AlN/GaN heterostructures-Reference-Cited by-同舟云学术

Au-free low-temperature ohmic contacts for AlGaN/AlN/GaN heterostructures

Published:2020-11 Issue:6 Volume:38 Page:062206
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B
language:en
Short-container-title:Journal of Vacuum Science & Technology B

Author:

Wang Xiaowei¹,Huang Hsien-Chih²,Green Bruce³,Gao Xiang⁴,Rosenmann Daniel⁵,Li Xiuling²,Shi Junxia¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, The University of Illinois at Chicago, Chicago, Illinois 60607

2. Department of Electrical and Computer Engineering, The University of Illinois at Urbana-Champaign, Champaign, Illinois 60607

3. NXP Semiconductor, Chandler, Illinois 60607

4. IQE, Somerset, Illinois 60607

5. Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60607

Funder

NXP Semiconductor

Argonne National Laboratory

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/am-pdf/10.1116/6.0000287

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2. Structural investigation of ultra-low resistance deeply recessed sidewall ohmic contacts for AlGaN/GaN HEMTs based on Ti/Al/Ti-metallization;Semiconductor Science and Technology;2023-09-01

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4. Impact of the Low Temperature Ohmic Contact Process on DC and Forward Gate Bias Stress Operation of GaN HEMT Devices;IEEE Electron Device Letters;2022-10

5. Ohmic contact morphology improvement with reduced resistance using Si/Au/Ti/Al/Ni/Au (AlGaN) and Si/Au/Ti/Al/Ni/Au (InAlN) stack layers in III-Nitride HEMTs;Semiconductor Science and Technology;2022-06-21