Impact of the Low Temperature Ohmic Contact Process on DC and Forward Gate Bias Stress Operation of GaN HEMT Devices-Reference-Cited by-同舟云学术

Impact of the Low Temperature Ohmic Contact Process on DC and Forward Gate Bias Stress Operation of GaN HEMT Devices

Published:2022-10 Issue:10 Volume:43 Page:1609-1612
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Odabasi Oguz¹^ORCID,Ghobadi Amir²^ORCID,Gamze Ulusoy Ghobadi Turkan³,Unal Yakup²,Salkim Gurur²,Basar Gunes²,Butun Bayram²^ORCID,Ozbay Ekmel⁴^ORCID

Affiliation:

1. Department of Electrical and Electronics Engineering, Nanotechnology Research Center (NANOTAM), Bilkent University, Ankara, Turkey

2. Nanotechnology Research Center (NANOTAM), Bilkent University, Ankara, Turkey

3. Nanotechnology Research Center, Bilkent University, Ankara, Turkey

4. Department of Electrical and Electronics Engineering, and Department of Physics, Nanotechnology Research Center (NANOTAM), Institute of Materials Science and Nanotechnology (UNAM), Bilkent University, Ankara, Turkey

Funder

Turkish Scientific and Technological Research Council

Scientific and Technological Research Council of Türkiye

Turkcell Technology within the Framework of the Fifth Generation (5G) and Beyond Joint Graduate Support Program

Information and Communication Technologies Authority

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9903996/09858903.pdf?arnumber=9858903

Reference30 articles.

1. Impact of Drain-Lag Induced Current Degradation for a Dynamically Operated GaN-HEMT Power Amplifier

2. Temperature-dependent strain relaxation of the AlGaN barrier in AlGaN∕GaN heterostructures with and without Si3N4 surface passivation

3. Recent Advances in GaN‐Based Power HEMT Devices

4. A versatile low-resistance ohmic contact process with ohmic recess and low-temperature annealing for GaN HEMTs

5. Au-free low-temperature ohmic contacts for AlGaN/AlN/GaN heterostructures

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1. Structural investigation of ultra-low resistance deeply recessed sidewall ohmic contacts for AlGaN/GaN HEMTs based on Ti/Al/Ti-metallization;Semiconductor Science and Technology;2023-09-01

2. Modulated Electric Field to Analyze Channel Coupling in InAlN/GaN Double-Channel HEMTs;2023 16th UK-Europe-China Workshop on Millimetre Waves and Terahertz Technologies (UCMMT);2023-08-31

3. Trap characterization of GaN High-electron-mobility Transistors Based on the Transient Drain Voltage;Journal of Physics: Conference Series;2023-06-01

4. High Temperature Robustness of Enhancement-Mode p-GaN-Gated AlGaN/GaN HEMT Technology;2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA);2022-11-07