Investigation of trap effects in AlGaN∕GaN field-effect transistors by temperature dependent threshold voltage analysis
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2911727
Reference21 articles.
1. High-power SiO2∕AlGaN∕GaN metal-oxide-semiconductor heterostructure field-effect transistors
2. Recessed gate AlGaN/GaN modulation-doped field-effect transistors on sapphire
3. High-temperature effects of AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC substrates
4. Material and device issues of AlGaN/GaN HEMTs on silicon substrates
5. Temperature dependent microwave performance of AlGaN/GaN high-electron-mobility transistors on high-resistivity silicon substrate
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