DC & AC Performance Analysis of a T gate AlGaN/GaN HEMT on BGO substrate

Abstract

Investigation of DC and AC performance of Nano scale AlGaN/GaN High electron mobility transistors (HEMTs)with T shaped gate on a Beta Gallium Oxide (BGO) substrate is done. The DC and RF characteristics of the device are analysed using Silvaco TCAD software. The threshold voltage (V_th) and transconductance (g_m) of the device are also analysed. The device exhibited a cut off frequency of 250 GHz and a maximum oscillation frequency of 830 GHz. The proposed device is compared with T Gate AlGaN/GaN HEMTs on other reported substrate-silicon carbide (4H-SiC), with similar dimension. The device performance was analysed at different temperatures. The dc and ac measurements revealed that AlGaN/GaN HEMTs grown on BGO substrates will be a superior among other substrates for high-power and high-frequency applications.