Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Reference20 articles.
1. Del Alamo JA (2011) Nanometre electronics with III–V compound semiconductors. Nature 479(7373):317–323
2. Ajayan J, Nirmal D (2015) A review of InP/ InAlAs\ InGaAs based transistors for high frequency applications. Superlattice Microst 86(10):1–19
3. Nagatsuma T, Ducournau G, Renaud CC (2016) Advances in terahertz communications accelerated by photonics. Nat Photonics 10:371–379
4. Sun S-X, Ma L-H, Cheng C, Zhang C, Zhong Y-H, Li Y-X, Ding P, Jin Z (2017) Numerical Simulation of the Impact of Surface Traps on the Performance of InP – Based High Electron Mobility Transistors. Phys Status Solidi A:1700322
5. Ajayan J, Nirmal D (2016) 20 nm high performance enhancement mode InP HEMT with heavily doped S/D regions for future THz applications. Superlattice Microst 100(15):526–534
Cited by
9 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献