Study of single event effect for the InP-based HEMT with In0.53Ga0.47As/In0.3Ga0.7As/In0.7Ga0.3As composite channel
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference28 articles.
1. A critical review of design and fabrication challenges in InP HEMTs for future terahertz frequency applications;Ajayan;Mater. Sci. Semicond. Process.,2021
2. Investigation on DC/RF performance of LG=19 nm heterogeneous integrated Ga0.15In0.85As/InAs/Ga0.15In0.85As composite channel InP HEMT on silicon substrate for future beyond 5G and quantum computing applications;Bhattacharya;Silicon,2022
3. Improved fT/fmax in wide bias range by steam-annealed ultrathin-Al2O3 gate dielectrics for InP-based high-electron-mobility transistors;Ozaki;APEX,2022
4. Effect of 1 MeV electron irradiation on gate contact characteristics of InP-based HEMTs;Sun;Mater. Sci. Semicond. Process.,2020
5. Sub-30-nm In0.8Ga0.2As composite-channel high-electron-mobility transistors with record high-frequency characteristics;Jo;IEEE Trans. Electron. Dev.,2021
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1. Investigation of SiNx Passivated Dual Field Plate AlGaN/GaN HEMTs on Silicon Carbide and Sapphire Substrates Under Radiation Environment;Silicon;2023-05-16
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