Atomic layer deposited high-k Hf x Al(1−x)O as an alternative gate dielectric for 4H-SiC MIS based transistors
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Engineering,General Materials Science
Link
http://link.springer.com/content/pdf/10.1007/s11431-011-4697-1.pdf
Reference10 articles.
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3. Chung G Y, Tin C C, Williams J R, et al. Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide. Appl Phys Lett, 2000, 76: 1713–1715
4. Tanner C M, Perng Y C, Frewin C, et al. Electrical performance of Al2O3 gate dielectric films deposited by atomic layer deposition on 4H-SiC. Appl Phys Lett, 2007, 91: 203510
5. Tanner C M, Choi J, Chang J P. Electronic structure and band alignment at the HfO2/4H-SiC interface. J Appl Phys, 2007, 101: 034108
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