Electrical performance of Al2O3 gate dielectric films deposited by atomic layer deposition on 4H-SiC
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2805742
Reference23 articles.
1. Band alignment and defect states at SiC/oxide interfaces
2. Recent Advances in (0001) 4H-SiC MOS Device Technology
3. Insulator investigation on SiC for improved reliability
4. Al2O3 prepared by atomic layer deposition as gate dielectric on 6H-SiC(0001)
5. Characterization of High-k Ta[sub 2]Si Oxidized Films on 4H-SiC and Si Substrates as Gate Insulator
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