Electronic structure and band alignment at the HfO2∕4H-SiC interface
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2432402
Reference35 articles.
1. Band alignment and defect states at SiC/oxide interfaces
2. Recent Advances in (0001) 4H-SiC MOS Device Technology
3. Characterizations of SiC/SiO2 Interface Quality Toward High Power MOSFETs Realization
4. Insulator investigation on SiC for improved reliability
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