Study of a double epi-layers SiC junction barrier Schottky rectifiers embedded P layer in the drift region
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference15 articles.
1. Simulation and Experimental Study on the Junction Termination Structure for High-Voltage 4H-SiC PiN Diodes
2. A new physics-based self-heating effect model for 4H-SiC MESFETs
3. Theory of Semiconductor Superjunction Devices
4. Ultralow-Loss SiC Floating Junction Schottky Barrier Diodes (Super-SBDs)
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1. The analysis and characteristics of 4H-SiC floating junction JBS diodes with different structures underneath the termination region;Solid-State Electronics;2019-10
2. Investigation of Leakage Current Mechanisms in La2O3/SiO2/4H-SiC MOS Capacitors with Varied SiO2 Thickness;Journal of Electronic Materials;2016-07-11
3. Fabrications and characterizations of high performance 1.2 kV, 3.3 kV, and 5.0 kV class 4H–SiC power SBDs;Chinese Physics B;2016-04
4. Influence of three-dimensional p-buried layer pattern on the performance of 4H-SiC floating junction Schottky barrier diode;Japanese Journal of Applied Physics;2015-09-03
5. Study of Temperature Dependent Punch-through Behavior in 4H-SiC VJFET: TCAD Simulation;Materials Today: Proceedings;2015
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