Simulation and Experimental Study on the Junction Termination Structure for High-Voltage 4H-SiC PiN Diodes-Reference-Cited by-同舟云学术

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Simulation and Experimental Study on the Junction Termination Structure for High-Voltage 4H-SiC PiN Diodes

Published:2008-08 Issue:8 Volume:55 Page:1841-1846
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Hiyoshi Toru,Hori Tsutomu,Suda Jun,Kimoto Tsunenobu

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/4578833/04578850.pdf?arnumber=4578850

Cited by 67 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhancement of Breakdown Voltage Using Trench Edge Termination Technique in SiC-Based Power Device;Lecture Notes in Electrical Engineering;2023-11-03

2. A review of the etched terminal structure of a 4H-SiC PiN diode;Journal of Semiconductors;2023-11-01

3. SiC and GaN Power Devices;More-than-Moore Devices and Integration for Semiconductors;2023

4. Breakdown characteristics of trench edge terminated SiC Schottky diode;Materials Today: Proceedings;2023

5. Investigation on Trench Edge Termination in SiC Based Power Device;Lecture Notes in Electrical Engineering;2023

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