Enhancement of Breakdown Voltage Using Trench Edge Termination Technique in SiC-Based Power Device
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Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-99-4795-9_50
Reference38 articles.
1. Bahat-Treidel E et al (2012) Fast-switching GaN-based lateral power Schottky barrier diodes with low onset voltage and strong reverse blocking. IEEE Electron Device Lett 33(3):357–359. https://doi.org/10.1109/LED.2011.2179281
2. Baliga BJ (2006) Silicon carbide power devices. World Sci. https://doi.org/10.1142/5986
3. Brunt EV et al (2014) 22 kV, 1 cm 2, 4H-SiC n-IGBTs with improved conductivity modulation. In: 2014 IEEE 26th international symposium on power semiconductor devices & IC’s (ISPSD). IEEE, pp 358–361. https://doi.org/10.1109/ISPSD.2014.6856050
4. DiMarino CM et al (2015) High-temperature silicon carbide: characterization of state-of-the-art silicon carbide power transistors. IEEE Ind Electron Mag 9(3):19–30. https://doi.org/10.1109/MIE.2014.2360350
5. Hiyoshi T et al (2008) Simulation and experimental study on the junction termination structure for high-voltage 4H-SiC PiN diodes. IEEE Trans Electron Dev 55(8):1841–1846. https://doi.org/10.1109/TED.2008.926643
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