1. Silicon Carbide Power Devices;Jayant Baliga,2006
2. High-temperature silicon carbide: characterization of state-of-the-art silicon carbide power transistors;DiMarino;IEEE Ind. Electron. Mag.,2015
3. Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges;Tsao;Adv. Electron. Mater.,2018
4. Barrier height inhomogeneities induced anomaly in thermal sensitivity of Ni/4H-SiC Schottky diode temperature sensor;Kumar;J. Vac. Sci. Technol. B, Nanotechnol. Microelectron. Mater. Process. Meas. Phenom.,2014
5. Diameter dependent thermal sensitivity variation trend in Ni/4H-SiC Schottky diode temperature sensors;Kumar;J. Vac. Sci. Technol. B, Nanotechnol. Microelectron. Mater. Process. Meas. Phenom.,2015