A new physics-based self-heating effect model for 4H-SiC MESFETs
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference20 articles.
1. An SiC MESFET-Based MMIC Process
2. S-Band Operation of SiC Power MESFET With 20 W (4.4 W/mm) Output Power and 60% PAE
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1. Impact of parasitic resistances on the electrical characteristics of a SiC MESFET;Superlattices and Microstructures;2017-10
2. Effects of gate-buffer combined with a p-type spacer structure on silicon carbide metal semiconductor field-effect transistors;Chinese Physics B;2012-01
3. Effects of the improved hetero-material-gate approach on sub-micron silicon carbide metal-semiconductor field-effect transistor;Acta Physica Sinica;2012
4. Thermal stability improvement of a multiple finger power SiGe heterojunction bipolar transistor under different power dissipations using non-uniform finger spacing;Chinese Physics B;2011-01
5. Improvement on thermal stability of power heterojunction bipolar transistor using non-uniform finger spacing;Acta Physica Sinica;2011
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