Impact of parasitic resistances on the electrical characteristics of a SiC MESFET-Reference-Cited by-同舟云学术

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Impact of parasitic resistances on the electrical characteristics of a SiC MESFET

Published:2017-10 Issue: Volume:110 Page:10-18
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Dutta Sutanu

Funder

University of Calcutta

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference33 articles.

1. Physically based model for trapping and self-heating effects in 4H-SiC MESFETs;Lu;Appl. Phys. A,2008

2. S.S. Mukherjee, S.S. Islam and J.R. Bowman “An analytical model of SiC MESFET incorporating trapping and thermal effects”, Solid State Electron., 48, 1709–152004.

3. Analytical model for high temperature performance of non-self aligned SiC MESFET;Aggarwal;Indian J. pure Appl. Phys.,2005

4. Electro-thermal analytical model and simulation of the self-heating effects in multi-finger 4H-SiC power MESFETs;Deng;Semicond. Sci. Technol.,2007

5. Two-dimensional analysis of the gate source distance scaling effects in 4H-SiC MESFETs;Deng;Semicond. Sci. Technol.,2009

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysing the Effects of Varying Parameters in a MESFET;2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO);2022-04-28

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