Conventional n-channel MOSFET devices using single layer HfO/sub 2/ and ZrO/sub 2/ as high-k gate dielectrics with polysilicon gate electrode-Reference-Cited by-同舟云学术

Conventional n-channel MOSFET devices using single layer HfO/sub 2/ and ZrO/sub 2/ as high-k gate dielectrics with polysilicon gate electrode

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Container-title:International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)
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Author:

Yudong Kim ,Gebara G.,Freiler M.,Barnett J.,Riley D.,Chen J.,Torres K.,JaeEun Lim ,Foran B.,Shaapur F.,Agarwal A.,Lysaght P.,Brown G.A.,Young C.,Borthakur S.,Hong-Jyh Li ,Nguyen B.,Zeitzoff P.,Bersuker G.,Derro D.,Bergmann R.,Murto R.W.,Hou A.,Huff H.R.,Shero E.,Pomarede C.,Givens M.,Mazanez M.,Werkhoven C.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/7704/21092/00979538.pdf?arnumber=979538

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Trap state passivation improved hot-carrier instability by zirconium-doping in hafnium oxide in a nanoscale n-metal-oxide semiconductor-field effect transistors with high-k/metal gate;Applied Physics Letters;2016-04-25

2. Electron-electron scattering-induced channel hot electron injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors with high-k/metal gate stacks;Applied Physics Letters;2014-10-06

3. Investigation of trap properties of Hf0.83Zr0.17O2high-kgate stack p-type MOSFETs by low-frequency (1/f) noise and random telegraph noise analyses;Japanese Journal of Applied Physics;2014-07-18

4. Abnormal threshold voltage shift under hot carrier stress in Ti1−xNx/HfO2 p-channel metal-oxide-semiconductor field-effect transistors;Journal of Applied Physics;2013-09-28

5. Abnormal sub-threshold swing degradation under dynamic hot carrier stress in HfO2/TiN n-channel metal-oxide-semiconductor field-effect-transistors;Applied Physics Letters;2013-07-08