Investigation of trap properties of Hf0.83Zr0.17O2high-kgate stack p-type MOSFETs by low-frequency (1/f) noise and random telegraph noise analyses-Reference-Cited by-同舟云学术

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Investigation of trap properties of Hf0.83Zr0.17O2high-kgate stack p-type MOSFETs by low-frequency (1/f) noise and random telegraph noise analyses

Published:2014-07-18 Issue:8S1 Volume:53 Page:08LB03
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Tsai Shih-Chang,Wu San-Lein,Huang Po-Chin,Wang Bo-Chin,Tsai Kai-Shiang,Kao Tsung-Hsien,Yang Chih-Wei,Chen Cheng-Guo,Cheng Osbert,Fang Yean-Kuen,Chang Shoou-Jinn,Chen Jone-Fang

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/53/i=8S1/a=08LB03/pdf

Reference35 articles.

1. Conventional n-channel MOSFET devices using single layer HfO/sub 2/ and ZrO/sub 2/ as high-k gate dielectrics with polysilicon gate electrode

2. High-k gate stacks for planar, scaled CMOS integrated circuits

3. Band offsets of high dielectric constant gate oxides on silicon

4. High-κ gate dielectrics: Current status and materials properties considerations

5. A highly manufacturable MIPS (metal inserted poly-Si stack) technology with novel threshold voltage control

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Modified 1/ Noise Model for MOSFETs With Ultra-Thin Gate Oxide;IEEE Electron Device Letters;2016-05

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