Electron-electron scattering-induced channel hot electron injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors with high-k/metal gate stacks-Reference-Cited by-同舟云学术

Electron-electron scattering-induced channel hot electron injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors with high-k/metal gate stacks

Published:2014-10-06 Issue:14 Volume:105 Page:143505
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tsai Jyun-Yu¹,Chang Ting-Chang¹²,Chen Ching-En³,Ho Szu-Han³,Liu Kuan-Ju¹,Lu Ying-Hsin¹,Liu Xi-Wen¹,Tseng Tseung-Yuen³,Cheng Osbert⁴,Huang Cheng-Tung⁴,Lu Ching-Sen⁴

Affiliation:

1. Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan

2. Advanced Optoelectronics Technology Center, National Cheng Kung University, Tainan, Taiwan

3. Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan

4. Device Department, United Microelectronics Corporation, Tainan Science Park, Tainan, Taiwan

Funder

National Science Council Taiwan (NSC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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