Effects of Ambient Atmosphere on Electrical Characteristics of Al2O3 Passivated InGaZnO Thin Film Transistors during Positive-Bias-Temperature-Stress Operation-Reference-Cited by-同舟云学术

Effects of Ambient Atmosphere on Electrical Characteristics of Al2O3 Passivated InGaZnO Thin Film Transistors during Positive-Bias-Temperature-Stress Operation

Published:2011 Issue:4 Volume:14 Page:H177
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Huang Sheng-Yao,Chang Ting-Chang,Chen Min-Chen,Chen Shih-Ching,Tsai Chih-Tsung,Hung Ming-Chin,Tu Chun-Hao,Chen Chia-Hsiang,Chang Jiun- Jye,Liau Wei-Lung

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference18 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel

3. High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper

4. Bottom-Gate Gallium Indium Zinc Oxide Thin-Film Transistor Array for High-Resolution AMOLED Display

5. Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules

Cited by 72 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Bias stress stabilities of PMMA-passivated indium-gallium-zinc-oxide thin-film transistors after 100 °C steam exposure;Solid-State Electronics;2024-05

2. Amorphous N-doped InSnZnO thin films deposited by RF sputtering for thin-film transistor application;Materials Advances;2023

3. Low Cost, Al ₂ O ₃ and ZrAlO _x Stack Passivation by Spray Pyrolysis for Highly Stable Amorphous InGaZnO Thin‐Film Transistors;Advanced Materials Interfaces;2022-08-17

4. High-performance IGZO/Ga₂O₃ dual-active-layer thin film transistor for deep UV detection;Applied Physics Letters;2022-06-27

5. Improving Reliability of a-InGaZnO TFTs With Optimal Location of Al₂O₃ Passivation in Moist Environment;IEEE Transactions on Electron Devices;2022-06