Low Cost, Al 2 O 3 and ZrAlO x Stack Passivation by Spray Pyrolysis for Highly Stable Amorphous InGaZnO Thin‐Film Transistors
Author:
Affiliation:
1. Advanced Display Research Center (ADRC) Department of Information Display Kyung Hee University 26, Kyungheedae‐ro Dongdaemun‐gu Seoul 02447 Korea
Publisher
Wiley
Subject
General Medicine
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/admi.202200906
Reference66 articles.
1. Augmented reality and virtual reality displays: emerging technologies and future perspectives
2. Achieving a Low-Voltage, High-Mobility IGZO Transistor through an ALD-Derived Bilayer Channel and a Hafnia-Based Gate Dielectric Stack
3. Ultra-High-Speed Intense Pulsed-Light Irradiation Technique for High-Performance Zinc Oxynitride Thin-Film Transistors
4. Improvement of Thermal and Environmental Stabilities of Short Channel Coplanar Amorphous InGaZnO Thin‐Film Transistors by Introducing Amorphous ZrAlO x Interlayer
5. An 18.6-μm-Pitch Gate Driver Using a-IGZO TFTs for Ultrahigh-Definition AR/VR Displays
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1. An Ultralow Subthreshold Swing of 28 mV dec–1 in Negative-Capacitance Thin-Film Transistors with Ferroelectric Zirconium–Aluminum Oxide Gate Oxide;ACS Applied Electronic Materials;2024-07-16
2. Transistors with ferroelectric ZrXAl1−XOY crystallized by ZnO growth for multi-level memory and neuromorphic computing;Communications Materials;2024-04-15
3. High-performance sol–gel processed a-IGZO TFTs with low-melting point metal electrodes;Journal of Materials Chemistry C;2024
4. Improved mobility and bias stability of Hf-doped IGZO/IZO/Hf-doped IGZO thin-film transistor;Journal of Alloys and Compounds;2024-01
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