An Ultralow Subthreshold Swing of 28 mV dec<sup>–1</sup> in Negative-Capacitance Thin-Film Transistors with Ferroelectric Zirconium–Aluminum Oxide Gate Oxide-Reference-Cited by-同舟云学术

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An Ultralow Subthreshold Swing of 28 mV dec^–1 in Negative-Capacitance Thin-Film Transistors with Ferroelectric Zirconium–Aluminum Oxide Gate Oxide

Published:2024-07-16 Issue: Volume: Page:
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Islam Md Mobaidul¹^ORCID,Arnob MD Redowan Mahmud¹,Ali Arqum¹,Woo Dong Yeon²,Kwak Joon Young³^ORCID,Jang Jin¹^ORCID

Affiliation:

1. Advanced Display Research Center, Department of Information Display, Kyung Hee University, 26 Kyungheedae-ro, Dongdaemun-gu, Seoul 02447, Republic of Korea

2. KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Republic of Korea

3. Division of Electronic and Semiconductor Engineering, Ewha Womans University, Seoul 03760, Republic of Korea

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.4c00944

Reference29 articles.

1. Ferroelectric gating of two-dimensional semiconductors for the integration of steep-slope logic and neuromorphic devices

2. Steep-slope hysteresis-free negative capacitance MoS2 transistors

3. Van der Waals negative capacitance transistors

4. Ferroelectric negative capacitance

5. Unveiling the double-well energy landscape in a ferroelectric layer

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