Achieving a Low-Voltage, High-Mobility IGZO Transistor through an ALD-Derived Bilayer Channel and a Hafnia-Based Gate Dielectric Stack
Author:
Affiliation:
1. Department of Electronic Engineering, Hanyang University, Seoul 04763, South Korea
Funder
LG Display
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.0c22677
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