Evolution of Enhanced Performance of a-IGZO TFTs With Cu/Al-Based Contacts-Reference-Cited by-同舟云学术

Evolution of Enhanced Performance of a-IGZO TFTs With Cu/Al-Based Contacts

Published:2024-09 Issue:9 Volume:71 Page:5432-5436
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Wang Chunlan¹^ORCID,Jiao Yuchao¹^ORCID,Luo Chi¹^ORCID,Song Yongle¹^ORCID,Huang Hao²^ORCID,Lu Hongbing³^ORCID,Wang Jingli⁴^ORCID

Affiliation:

1. Xi’an Polytechnic University, Xi’an, China

2. Guangxi Key Laboratory of Processing for Nonferrous Metals and Featured Material, School of Resources, Environment and Materials, Guangxi University, Nanning, China

3. School of Physics and Information Technology, Shaanxi Normal University, Xi’an, China

4. State Key Laboratory of Integrated Chip and System, Frontier Institute of Chip and System, Fudan University, Shanghai, China

Funder

National Natural Science Foundation of China

Key Science and Technology Program of Shaanxi Province

Opening Project of Key Laboratory of Optoelectronic Chemical Materials and Devices, Ministry of Education, Jianghan University

Program of the Key Laboratory of Artificial Microstructure, Ministry of Education

Program of State Key Laboratory of Infrared Physics

National Key Research and Development Program of China

Shanghai Science and Technology Development Funds

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/16/10645717/10620015.pdf?arnumber=10620015

Reference37 articles.

1. Selectively Nitrogen Doped ALD-IGZO TFTs with Extremely High Mobility and Reliability

2. Investigation of Light-Stimulated α-IGZO Based Photoelectric Transistors for Neuromorphic Applications

3. Amorphous InGaZnO (a-IGZO) Synaptic Transistor for Neuromorphic Computing

4. Gate Dielectric Breakdown in A-InGaZnO Thin Film Transistors With Cu Electrodes

5. Performance of Transparent Indium–Gallium–Zinc Oxide Thin Film Transistor Prepared by All Plasma Enhanced Atomic Layer Deposition