Selectively Nitrogen Doped ALD-IGZO TFTs with Extremely High Mobility and Reliability-Reference-Cited by-同舟云学术

Selectively Nitrogen Doped ALD-IGZO TFTs with Extremely High Mobility and Reliability

Published:2023-06-23 Issue:26 Volume:15 Page:31652-31663
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Kim Dong-Gyu¹,Choi Hyuk²^ORCID,Kim Yoon-Seo¹,Lee Dong-Hyeon¹,Oh Hye-Jin¹,Lee Ju Hyeok²,Kim Junghwan³^ORCID,Lee Seunghee⁴,Kuh Bongjin⁴,Kim Taewon⁴,Kim Hyun You²^ORCID,Park Jin-Seong¹^ORCID

Affiliation:

1. Division of Materials Science and Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea

2. Department of Materials Science and Engineering, Chungnam National University, 99, Daehak-ro, Yuseong-gu, Daejeon 34134, Republic of Korea

3. Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea

4. Semiconductor R&D Center, Samsung Electronics, 1, Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do 18448, Republic of Korea

Funder

Samsung

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.3c05678

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