Improvement of Thermal and Environmental Stabilities of Short Channel Coplanar Amorphous InGaZnO Thin‐Film Transistors by Introducing Amorphous ZrAlO x Interlayer-Reference-Cited by-同舟云学术

Improvement of Thermal and Environmental Stabilities of Short Channel Coplanar Amorphous InGaZnO Thin‐Film Transistors by Introducing Amorphous ZrAlO x Interlayer

Published:2021-10-29 Issue: Volume: Page:2100957
ISSN:1438-1656
Container-title:Advanced Engineering Materials
language:en
Short-container-title:Adv Eng Mater

Author:

Lee Jiseob¹,Lee Suhui¹,Islam Md Mobaidul¹,Jang Jin¹^ORCID

Affiliation:

1. Advanced Display Research Center (ADRC) Department of Information Display Kyung Hee University Dongdaemoon-ku Seoul 130-701 Korea

Funder

Ministry of Trade, Industry and Energy

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adem.202100957

Reference54 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Present status of amorphous In–Ga–Zn–O thin-film transistors

3. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices

4. Role of Ga2O3–In2O3–ZnO channel composition on the electrical performance of thin-film transistors

5. Tailoring IGZO Composition for Enhanced Fully Solution-Based Thin Film Transistors

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