Trap state passivation improved hot-carrier instability by zirconium-doping in hafnium oxide in a nanoscale n-metal-oxide semiconductor-field effect transistors with high-k/metal gate-Reference-Cited by-同舟云学术

Trap state passivation improved hot-carrier instability by zirconium-doping in hafnium oxide in a nanoscale n-metal-oxide semiconductor-field effect transistors with high-k/metal gate

Published:2016-04-25 Issue:17 Volume:108 Page:173504
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Liu Hsi-Wen¹,Chang Ting-Chang¹²,Tsai Jyun-Yu¹,Chen Ching-En³,Liu Kuan-Ju¹,Lu Ying-Hsin¹,Lin Chien-Yu⁴,Tseng Tseung-Yuen³,Cheng Osbert⁵,Huang Cheng-Tung⁵,Ye Yi-Han⁵

Affiliation:

1. Department of Physics, National Sun Yat-sen University, 70 Lien-hai Road, Kaohsiung 80424, Taiwan

2. Advanced Optoelectronics Technology Center, National Cheng Kung University, Tainan 701, Taiwan

3. Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan

4. Department of Photonics, National Sun Yat-Sen University, 70 Lien-hai Road, Kaohsiung 80424, Taiwan

5. Device Department, United Microelectronics Corporation, Tainan Science Park, Tainan 701, Taiwan

Funder

Ministry of Science and Technology, Taiwan (MOST)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4947439

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3. Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure

4. Influence of positive bias stress on N2O plasma improved InGaZnO thin film transistor

5. Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress

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