Influence of positive bias stress on N2O plasma improved InGaZnO thin film transistor-Reference-Cited by-同舟云学术

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Influence of positive bias stress on N2O plasma improved InGaZnO thin film transistor

Published:2010-06-14 Issue:24 Volume:96 Page:242105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tsai Chih-Tsung,Chang Ting-Chang,Chen Shih-Ching,Lo Ikai,Tsao Shu-Wei,Hung Ming-Chin,Chang Jiun-Jye,Wu Chen-Yi,Huang Chun-Yao

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3453870

Reference16 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

3. High-performance hydrogenated amorphous-Si TFT for AMLCD and AMOLED applications

4. Circuits using uniform TFTs based on amorphous In-Ga-Zn-O

5. A comparison of zinc oxide thin-film transistors on silicon oxide and silicon nitride gate dielectrics

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4. Turn-around of threshold voltage shift in amorphous InGaZnO TFT under positive bias illumination stress;Solid-State Electronics;2023-03

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