Physical and chemical mechanisms in oxide-based resistance random access memory-Reference-Cited by-同舟云学术

Physical and chemical mechanisms in oxide-based resistance random access memory

Published:2015-03-12 Issue:1 Volume:10 Page:
ISSN:1931-7573
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Chang Kuan-Chang,Chang Ting-Chang,Tsai Tsung-Ming,Zhang Rui,Hung Ya-Chi,Syu Yong-En,Chang Yao-Feng,Chen Min-Chen,Chu Tian-Jian,Chen Hsin-Lu,Pan Chih-Hung,Shih Chih-Cheng,Zheng Jin-Cheng,Sze Simon M

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/article/10.1186/s11671-015-0740-7/fulltext.html

Reference147 articles.

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2. Chang TC, Jian FY, Chen SC, Tsai YT. Developments in nanocrystal memory. Mater Today. 2011;14:608–15.

3. Hung MF, Wu YC, Tang ZY. High-performance gate-all-around polycrystalline silicon nanowire with silicon nanocrystals nonvolatile memory. App Phys Lett. 2011;98:162108.

4. Lin CC, Kuo Y, Zhang S. Nonvolatile memory devices with AlOx embedded Zr-doped HfO2 high-k gate dielectric stack. J Vac Sci Technol B. 2014;32:03D116.

5. Syu YE, Chang TC, Lou JH, Tsai TM, Chang KC, Tsai MJ, et al. Atomic-level quantized reaction of HfOx memristor. Appl Phys Lett. 2013;102:172903.

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