Silk fibroin/graphene quantum dots composite memristor with multi-level resistive switching for synaptic emulators-Reference-Cited by-同舟云学术

Silk fibroin/graphene quantum dots composite memristor with multi-level resistive switching for synaptic emulators

Published:2024 Issue:10 Volume:12 Page:3730-3738
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Fan Suna¹^ORCID,Liu Shubin¹,Xie Yulong¹,Zhou Xinglu¹^ORCID,Zhang Yaopeng¹^ORCID

Affiliation:

1. State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, P. R. China

Abstract

Silk fibroin (SF)/graphene quantum dots (GQDs) composite memristor realizes three resistance states in single scanning cycle and has the ability to simulate synaptic plasticity.

Funder

Shanghai Rising-Star Program

National Natural Science Foundation of China

Science and Technology Commission of Shanghai Municipality

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TC/D3TC04507B

Reference47 articles.

1. A low-power Si:HfO2 ferroelectric tunnel memristor for spiking neural networks

2. Synaptic Learning and Memory Functions Achieved Using Oxygen Ion Migration/Diffusion in an Amorphous InGaZnO Memristor

3. Data-intensive applications, challenges, techniques and technologies: A survey on Big Data

4. Short-term plasticity and long-term potentiation mimicked in single inorganic synapses

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