Ultra-high ON/OFF ratio with low set voltage for a Pt-Nb2O5-Pt resistivity switching device-Reference-Cited by-同舟云学术

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Ultra-high ON/OFF ratio with low set voltage for a Pt-Nb2O5-Pt resistivity switching device

Published:2024-07 Issue: Volume:512 Page:129568
ISSN:0375-9601
Container-title:Physics Letters A
language:en
Short-container-title:Physics Letters A

Author:

Gao Pengbo,Guo Jiacheng,Li Qifeng,Dong Zhihu,Zhu Yuanyuan,Xu Jing,Liu Yong,Wang Hongjun,He Chunqing

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Reference40 articles.

1. Erratum: the missing memristor found;Strukov;Nature,2009

2. The future of electronics based on memristive systems;Zidan;Nat. Electron.,2018

3. Sub-nanosecond switching of a tantalum oxide memristor;Torrezan;Nanotechnology,2011

4. Multilevel resistive switching in Ti/CuxO/Pt memory devices;Wang;J. Appl. Phys.,2010

5. Neuromorphic computing based on emerging memory technologies;Rajendran;IEEE J. Emerg. Sel. Top. Circuits Syst.,2016

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Stacked Layers of Nb2O5/Pt/Nb2O5 Designed as Conducting Oxides, Terahertz Band Filters, and Semitransparent Light Absorbers;Journal of Electronic Materials;2024-08-12

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