Abnormal sub-threshold swing degradation under dynamic hot carrier stress in HfO2/TiN n-channel metal-oxide-semiconductor field-effect-transistors-Reference-Cited by-同舟云学术

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Abnormal sub-threshold swing degradation under dynamic hot carrier stress in HfO2/TiN n-channel metal-oxide-semiconductor field-effect-transistors

Published:2013-07-08 Issue:2 Volume:103 Page:022106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tsai Jyun-Yu,Chang Ting-Chang,Lo Wen-Hung,Chen Ching-En,Ho Szu-Han,Chen Hua-Mao,Tai Ya-Hsiang,Cheng Osbert,Huang Cheng-Tung

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4811784

Reference30 articles.

1. Developments in nanocrystal memory

2. Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films

3. Bias-induced oxygen adsorption in zinc tin oxide thin film transistors under dynamic stress

4. A low-temperature method for improving the performance of sputter-deposited ZnO thin-film transistors with supercritical fluid

5. Hydrogen-induced improvements in electrical characteristics of a-IGZO thin-film transistors

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1. The Impact of Fin Number on Device Performance and Reliability for Multi-Fin Tri-Gate n- and p-Type FinFET;IEEE Transactions on Device and Materials Reliability;2018-12

2. Influence of fin number on hot-carrier injection stress induced degradation in bulk FinFETs;Microelectronics Reliability;2016-12

3. Anomalous degradation behaviors under illuminated gate bias stress in a-Si:H thin film transistor;Thin Solid Films;2014-12

4. Investigation of temperature-dependent asymmetric degradation behavior induced by hot carrier effect in oxygen ambiance in In–Ga–Zn-O thin film transistors;Thin Solid Films;2014-12

5. Examination of hot-carrier stress induced degradation on fin field-effect transistor;Applied Physics Letters;2014-02-24

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