Anomalous degradation behaviors under illuminated gate bias stress in a-Si:H thin film transistor-Reference-Cited by-同舟云学术

Anomalous degradation behaviors under illuminated gate bias stress in a-Si:H thin film transistor

Published:2014-12 Issue: Volume:572 Page:79-84
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Tsai Ming-Yen,Chang Ting-Chang,Chu Ann-Kuo,Hsieh Tien-Yu,Lin Kun-Yao,Wu Yi-Chun,Huang Shih-Feng,Chiang Cheng-Lung,Chen Po-Lin,Lai Tzu-Chieh,Lo Chang-Cheng,Lien Alan

Funder

National Science Council of the Republic of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

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4. Investigation of an anomalous hump in gate current after negative-bias temperature-instability in HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors;Ho;Appl. Phys. Lett.,2013

5. Investigation of extra traps measured by charge pumping technique in high voltage zone in p-channel metal-oxide-semiconductor field-effect transistors with HfO2/metal gate stacks;Ho;Appl. Phys. Lett.,2013

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