P‐1.24: Investigation of Abnormal Degradation Behaviors under Negative Bias Stress in a‐Si:H TFTs-Reference-Cited by-同舟云学术

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P‐1.24: Investigation of Abnormal Degradation Behaviors under Negative Bias Stress in a‐Si:H TFTs

Published:2024-04 Issue:S1 Volume:55 Page:701-701
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:Symp Digest of Tech Papers

Author:

Jiang Zhixiong¹,Xu Hongyuan²³,Song Yanjun¹,Hu Cong²,Chi Baolin²,Sean ²,Dai Ronglei¹,Su Zifang¹,Xiao Juncheng¹³

Affiliation:

1. Guangzhou China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Guangzhou Guangdong China

2. TCL China Star Optoelectronics Technology Co., Ltd. Shenzhen Guangdong China

3. Peking University Shenzhen Graduate School Shenzhen Guangdong China

Publisher

Wiley

Reference3 articles.

1. etc., Appl;Powell M.J.;Phys. Lett

2. etc., Phys;Hepburn A.R.;Rev. Lett

3. Anomalous degradation behaviors under illuminated gate bias stress in a-Si:H thin film transistor

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