Blue laser diode annealing-enhanced bottom-gate low-temperature Poly-Si thin-film transistors-Reference-Cited by-同舟云学术

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Blue laser diode annealing-enhanced bottom-gate low-temperature Poly-Si thin-film transistors

Published:2022-12 Issue: Volume:152 Page:107113
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Xu Hongyuan,Wang Xu,Hu Daobing^ORCID,Zheng Feng,Xiao Juncheng,Lu Lei,Zhang Shengdong

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference28 articles.

1. Oxide versus LTPS TFTs for active-matrix displays;Mativenga;SID Symp Digest Tech Pap,2014

2. Experimental and physics-based analysis of leakage currents for LTPS TFTs in AMOLED Displays;Kim;SID Symp Digest Tech Pap,2021

3. Current and future technology of low temperature poly-Si TFT-LCDs;Oana;J. Soc. Inf. Disp.,2001

4. Active-matrix GaN μ-LED display using oxide thin‐film transistor backplane and flip chip LED bonding;Um;Adv. Electron. Mater.,2019

5. A 142-in. IGZO-TFT glass-substrate AM miniLED tiled display with external compensation and multilayer demura algorithm;Huo;SID Symp Digest Tech Pap,2021

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigating DC and AC degradation behaviors to P-type low temperature polycrystalline silicon thin film transistor with fin-like structure;Journal of Physics D: Applied Physics;2023-07-27

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