Investigating DC and AC degradation behaviors to P-type low temperature polycrystalline silicon thin film transistor with fin-like structure

Abstract

Abstract Currently, thin film transistor (TFT) based on planar structure is widely used in the applications of display panels. However, when the device is scaling-down, new device structures or novel materials should be introduced. In this work, the low temperature polycrystalline silicon (LTPS) TFT with fin-like structure is investigated. On the basis of electrical measurements, the device features good switching characteristics with low operating voltages. However, the I d–V g sweeping result exhibits off-state leakage, which is known as the gate-induced drain leakage (GIDL) current. The GIDL current is increased with the drain bias and the temperature increasing. To observe the GIDL current degradations, different gate biases with negative bias stress and positive bias stress are applied. The results show different degradation behaviors. In addition, bias stresses with DC and AC methods are also applied to verify the device reliability. Both threshold voltage (V t) shift and sub-threshold swing (S.S.) are also extracted to verify the degradations of the device. Finally, the physical models are also proposed to illustrate the degradation behaviors of the LTPS device with a fin-like structure, which can be beneficial to future related development of LTPS-based devices.